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| inchange semiconductor isc product specification isc silicon npn power transistor BU105 description high voltage-v cer = 1500v(min.) collector-emitter saturation voltage- : v ce(sat) = 5.0v(max.)@ i c = 2.5a applications designed for use in line operated b&w(19 and 20 inch 110 deflection circuits ) or color ( 11 and 14 inch 90 deflection circuits tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v cer collector-emitter voltage r be = 100 1500 v v ceo collector-emitter voltage 750 v v ebo emitter-base voltage 5 v i c collector current-continuous 2.5 a p c collector power dissipation @t c = 90 10 w t j junction temperature 115 t stg storage temperature -65~115 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU105 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 750 v v (br)ebo emitter-base breakdown voltage i e = 100ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 2.5a; i b = 1.5a 5.0 v v be (sat) base-emitter saturation voltage i c = 2.5a; i b = 1.5a 1.5 v i ces collector cutoff current v ce = 1500v; v be = 0 1.0 ma c ob output capacitance i e = 0; v cb = 10v; f test = 0.1mhz 65 pf f t current-gain?bandwidth product i c = 0.1a; v ce = 5v 7.5 mhz t f fall time i c = 2a; i b1 = 1.5a; l b = 12 h 0.5 s isc website www.iscsemi.cn 2 |
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